http://www.ncepower.com wuxi nce power semiconductor co., ltd page 1 v1.0 NCE20ED135T pb free product NCE20ED135T 1350v, 20a, trench fs igbt features z trench fs( field stop) igbt z high speed switching z low saturation voltage: v ce(sat) =2.0v@i c =20a z high input impedance applications z inductive heating, microwav e oven, inverter, ups, etc. z soft switching applications general description using advanced trench field stop technology, nce?s 1350v igbts offers superior conducti on and switching performances, and easy parallel operation with exceptional avalanche rugged- ness. this device is designed fo r soft switching applications. absolute maximum ratings notes: 1. repetitive rating, pulse width lim ited by max. junction temperature symbol description ratings units v ces collector to emitter voltage 1350 v v ges gate to emitter voltage +/-30 v continuous collector current @t c =25c 40 a i c continuous collector current @t c =100c 20 a i cm (1) pulsed collector current 60 a i f diode continuous forward current @t c =100c 20 i fm diode maximum forward current 60 a maximum power dissipation @t c =25c 340 w p d maximum power dissipation @t c =100c 170 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8" from case for 5seconds 260 c
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 2 v1.0 NCE20ED135T pb free product thermal characteristics symbol parameter typ. max. units r jc thermal resistance, junction to case - 0.37 c/w r ja thermal resistance, junction to ambient - 40 c/w electrical characteristics t c =25 c symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge =0v, ic=1ma 1350 - - v i ces collector cut-off current v ce =1350v, v ge =0v - - 100 ua i ges g-e leakage current v ge =30v, v ce =0v - - +/-100 na on characteristics v ge(th) g-e threshold voltage i c =1ma, v ce =v ge 5 7 v i c =20a, v ge =15v t c =25c - 1.7 2 v v ce(sat) collector to emitter saturation voltage i c =20a, v ge =15v t c =125c - 2 - v dynamic characteristics c ies input capacitance - 2050 - pf c oes output capacitance - 70 - pf c res reverse transfer capacitance v ce =30v, v ge =0v, f=1mhz - 40 - pf switching characteristics t d(off) turn-off delay time - 190 - ns t f fall time - 100 ns e off turn-off switching loss v cc =600v,i c =20a, r g =10 ? ,v ge =15v, inductive load, t c =25c - 0.9 mj t d(off) turn-off delay time - 200 ns t f fall time - 154 ns e off turn-off switching loss v cc =600v,i c =20a, r g =10 ? ,v ge =15v, inductive load, t c =125c - 1.4 mj q g total gate charge - 190 240 nc q ge gate to emitter charge - 15 23 nc q gc gate to collector charge v cc =600v,i c =20a, v ge =15v - 80 120 nc diode characteristics v fm forward voltage i f =20a,t c =25c - 1.8 2 v t rr reverse recovery time - 235 350 ns i rr peak reverse recovery current - 27 40 a q rr reverse recovery charge i f =20a, di/dt=200a/us t c =25c - 3130 4700 uc
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 3 v1.0 NCE20ED135T pb free product typical performance characteristics figure 1. typical output characteristics figure 2. typical saturation voltage characteristics figure 3. saturation voltage vs. case figure 4. saturation voltage vs. v ge temperature at variant current level figure 5. saturation voltage vs. v ge figure 6. saturation voltage vs. v ge collector current, i c (a) collector emitter voltage, v ce (v) collector emitter voltage, v ce (v) collector current i c, (a) collector emitter voltage, vce(v) case temperature, tc(c) collector emitter voltage, vce(v) gate emitter voltage, v ge ( v) gate emitter voltage, v ge ( v) gate emitter voltage, v ge ( v) collector emitter voltage, vce(v) collector emitter voltage, vce(v)
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 4 v1.0 NCE20ED135T pb free product typical performance characteristics (continued) figure 7. capacitance characteristics figure 8. turn-on characteristics vs. gate resistance figure 9. turn-off characteristics vs. gate figure 10. switching loss vs. gate resistance resistance figure 11. turn-on characteristics vs. collector figure 12. turn-off characteristics vs. current collector current ca p acitance (p f ) gate resistance, r g ( ? ) switchin g time ( ns ) collector emitter voltage, v ce (v) switchin g time ( ns ) gate resistance, r g ( ? ) gate resistance, r g ( ? ) switchin g loss ( mj ) switchin g loss ( mj ) switchin g loss ( mj ) collector current, i c (a) collector current, i c (a)
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 5 v1.0 NCE20ED135T pb free product typical performance characteristics (continued) figure 13. switching loss vs. collector current figure14. gate charge characteristics figure 15. soa characteristics figure 16. turn-off soa figure 17. transient thermal impedance of igbt switchin g loss ( mj ) collector current, i c (a) gate-emitter volta g e ( v ) gate charge, qg (nc) collector current, i c (a) collector emitter voltage, (v) collector current, i c (a) collector emitter voltage, (v)
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 6 v1.0 NCE20ED135T pb free product to-247 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 4.850 5.150 0.191 0.200 a1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 2.800 3.200 0.110 0.126 b2 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 d 15.450 15.750 0.608 0.620 e1 3.500 ref 0.138 ref e2 3.600 ref 0.142 ref l 40.900 41.300 1.610 1.626 l1 24.800 25.100 0.976 0.988 l2 20.300 20.600 0.799 0.811 7.100 7.300 0.280 0.287 e 5.450 typ 0.215 typ h 5.980 ref 0.235 ref
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 7 v1.0 NCE20ED135T pb free product attention: any and all nce products described or contained herein do not have specifications that c an handle applications that require extremely high levels of reliability, such as life-support sy stems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your nce representative nearest yo u before using any nce products descr ibed or contained herein in such applications. nce assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, oper ating condition ranges, or other parameters) listed in products specifications of any and all nce products described or contained herein. specifications of any and all nce pr oducts described or contained herein sti pulate the performance, characteristics, and functions of the described products in the independent state, and ar e not guarantees of the performance, characteristics, and functions of the described products as mounted in the cu stomer?s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mount ed in the customer?s products or equipment. nce power semiconductor co.,ltd. st rives to supply high-qualit y high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could enda nger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equi pment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce products(including technical data, servic es) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorit ies concerned in accordance with the above law. no part of this publication may be reproduced or transmi tted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of nce po wer semiconductor co.,ltd. information (including circuit diagrams and circuit param eters) herein is for example only ; it is not guaranteed for volume production. nce believes information herein is accu rate and reliable, but no guaran tees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, et c. when designing equipment, refer to t he "delivery specification" for the nce product that you intend to use. this catalog provides information as of mar. 2010. specifications and info rmation herein are subject to change without notice.
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